Fast-Transient Radiation-Hardened Low-Dropout Voltage Regulator for Space Applications

This article presents a fast-transient radiation-hardened low-dropout (LDO) voltage regulator integrated in standard 0.6-μm BiCMOS technology for space and other harsh radiation environment applications. The fabricated LDO consumes 150- μA quiescent current at 6-A maximum output current. An of 300 mV which corresponds to an ultralow R DS(ON) resistance 500 mΩ is realized by accurate modeling. A separate response circuit under narrow-bandwidth condition proposed improve the transient speed. It operates from input range 2.8-5.5 V provides 2.5 V, with accuracy ±2%. achieves successful line regulation 1 mV/V, load 2.16 mV/A. Effective layout techniques are applied realize high area-efficient chip, whose total area including pads 5.35 mm 2 , represents only about one-third similar products. Furthermore, special set ionizing dose (TID) experiments single-event latch-up (SEL) were performed. measurement results show that can tolerate up TID 150 krad (Si) SEL immunity linear energy transfer (LET) 99.8 MeV/(mg/cm ) design.